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Infineon IRFB4110 100V 180A MOSFET

Regular price Rs.200.00
Sale price Rs.250.00
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Infineon IRFB4110 100V 180A MOSFET - The Component Centre
Infineon IRFB4110 100V 180A MOSFET
Regular price Rs.200.00
Sale price Rs.250.00

IRFB4110

The IRFB4110 is a 100 V N‑Channel power MOSFET from Infineon Technologies, designed for high-power applications. It supports a continuous drain current of 180 A and a pulsed current up to 240 A, providing reliable current handling for DC motors, inverters, power amplifiers, and battery management systems. Its low on-resistance of 4.5 mΩ reduces conduction losses, improving thermal performance in demanding circuits. The TO‑220 package allows efficient heat dissipation and stable operation in industrial environments.

This device is suitable for high-frequency applications due to its fast switching capability and low gate charge enabled by charge‑balance technology. It is applicable in switch-mode power supplies (SMPS), EV motor drivers, renewable energy systems, and industrial automation. Its electrical characteristics are consistent under both continuous and pulsed load conditions, allowing predictable performance in complex designs.

The IRFB4110 operates over a junction temperature range of –55 °C to +175 °C, making it appropriate for environments with wide temperature variations. It features a robust body diode and fully characterized avalanche behavior, ensuring long-term operational reliability. Its combination of current capacity, switching efficiency, and thermal tolerance makes it suitable for a variety of industrial and commercial power electronics applications.


Key Specifications

Parameter Value
Drain‑Source Voltage (V<sub>DS</sub>) 100 V 
Continuous Drain Current (I<sub>D</sub>) 180 A
Pulsed Drain Current 240 A (typical)
On‑Resistance, R<sub>DS(on)</sub> Typ. 3.7 mΩ, Max. 4.5 mΩ
Power Dissipation (P<sub>tot</sub>) 370 W
Gate Charge (Q<sub>G</sub>) ~150 nC
Junction Operating Temperature (T<sub>j</sub>) –55 °C to +175 °C
Package Type TO‑220
Gate‑Source Threshold Voltage (V<sub>GS(th)</sub>) 2.0 V – 4.0 V

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