2MBI300VH-120-50 IGBT Module
The Fuji Electric 2MBI300VH-120-50 is a high-performance Insulated Gate Bipolar Transistor (IGBT) module designed for demanding power electronics applications. With a collector-emitter voltage rating of 1200V and a continuous collector current of 300A, this module delivers exceptional efficiency and reliability. Its advanced V-Series (6th generation) technology ensures fast switching speeds and low conduction losses, making it ideal for applications requiring high power density and thermal performance.
Built to withstand harsh industrial environments, the 2MBI300VH-120-50 features a robust package design that supports junction temperatures up to 175°C and operational temperatures up to 150°C. This durability ensures long-term reliability in systems such as inverters, uninterruptible power supplies (UPS), and renewable energy systems like wind and solar power generation. Its low-inductance structure minimizes switching losses, contributing to overall system efficiency and performance.
This IGBT module is particularly suitable for industrial and commercial applications where space constraints and thermal management are critical. Its compact M276 package and low thermal resistance make it an excellent choice for high-density power modules. Whether you're designing motor drives, servo amplifiers, or industrial machinery, the 2MBI300VH-120-50 offers the performance and durability needed to meet the demands of modern power electronics.
Key Specifications:
| Specification | Value |
|---|---|
| Collector-Emitter Voltage | 1200V |
| Continuous Collector Current | 300A |
| Maximum Junction Temperature | 175°C |
| Maximum Operating Junction Temperature | 150°C |
| Package Type | M276 |
| Package Dimensions (W x L) | 62mm x 108mm |
| Net Mass | 370g |
| Switching Frequency | High-speed |
| Inductance | Low |
| Gate Drive Voltage | ±15V |
| Gate Resistor (Rg) | 1.8Ω (recommended) |
For more detailed information, please refer to the Fuji Electric datasheet
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