IFS100B12N3E4P_B11 IGBT Module
The Infineon IFS100B12N3E4P_B11 is a high-performance IGBT module designed for demanding industrial and commercial power electronics applications. With a collector-emitter voltage rating of 1.2 kV and a continuous collector current of 150 A at 25°C, it delivers exceptional power handling capabilities. Its low collector-emitter saturation voltage of 1.75 V ensures minimal switching losses, making it highly efficient in converters, inverters, and motor drive systems.
Built on Infineon's IGBT4 technology, the IFS100B12N3E4P_B11 offers robust thermal performance, capable of operating between -40°C and +150°C. Its MIPAQ base module construction, combined with an isolated copper baseplate and pre-applied thermal interface material, provides effective heat dissipation for enhanced durability. PressFIT contact technology ensures secure and reliable electrical connections, making it suitable for servo drives, industrial converters, and other high-power applications.
This module emphasizes durability and efficiency, offering high power density while reducing system size. Its compact form factor and advanced thermal management make it ideal for industrial and commercial environments where reliability and continuous operation are critical. For more detailed information, please refer to the Infineon datasheet: Infineon IFS100B12N3E4P_B11 Datasheet
Key Specifications
| Feature | Specification |
|---|---|
| Manufacturer | Infineon Technologies |
| Product Category | IGBT Modules |
| Configuration | 6-Pack |
| Collector-Emitter Voltage (Vceo) | 1.2 kV |
| Continuous Collector Current | 150 A @ 25°C |
| Collector-Emitter Saturation Voltage (Vce(sat)) | 1.75 V |
| Power Dissipation (Pd) | 515 W |
| Gate-Emitter Leakage Current | 100 nA |
| Operating Temperature Range | -40°C to +150°C |
| Packaging | Tray |
| Technology | IGBT4 |
| Contact Technology | PressFIT |
| Thermal Interface Material | Pre-applied |
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