SKM400GB123D
The Semikron SKM400GB123D is a robust and efficient Insulated Gate Bipolar Transistor (IGBT) module, engineered to meet the demanding requirements of modern power electronics. With a voltage rating of 1200V and a current capacity of 400A, this module is designed for high-performance applications such as variable frequency drives (VFDs), industrial servo controllers, and uninterruptible power supplies (UPS). Its compact and integrated design simplifies system architecture, reduces component count, and enhances overall reliability, making it an ideal choice for both industrial and commercial power conversion systems.
Built on Semikron's advanced SEMITRANS® 3 platform, the SKM400GB123D integrates a three-phase input rectifier, brake chopper, and main inverter into a single module. This integration not only streamlines the design process but also improves efficiency by minimizing power losses and thermal stress. The module's low saturation voltage and fast switching characteristics contribute to reduced conduction and switching losses, enhancing overall system efficiency. Additionally, its high thermal conductivity ensures effective heat dissipation, supporting reliable operation even under demanding conditions.
The SKM400GB123D is engineered for durability and longevity, with a wide operating temperature range of -40°C to +150°C and a maximum junction temperature of 150°C. Its rugged construction and compliance with international standards make it suitable for use in harsh industrial environments. Whether for new designs or system upgrades, this IGBT module offers a cost-effective solution without compromising on performance or reliability.
Key Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (V<sub>CES</sub>) | 1200 V |
| Collector Current (I<sub>C</sub>) | 400 A |
| Collector Current (I<sub>C</sub>) at T<sub>case</sub> = 80°C | 330 A |
| Peak Collector Current (I<sub>CM</sub>) | 800 A (1 ms pulse) |
| Gate-Emitter Voltage (V<sub>GE</sub>) | ±20 V |
| Saturation Voltage (V<sub>CEsat</sub>) at I<sub>C</sub> = 300 A | 2.5 V |
| Gate-Emitter Threshold Voltage (V<sub>GE(th)</sub>) | 4.5 – 6.5 V |
| Total Power Loss (P<sub>tot</sub>) per IGBT at T<sub>case</sub> = 25°C | 2500 W |
| Operating Junction Temperature (T<sub>j</sub>) | -40°C to +150°C |
| Thermal Resistance Junction to Case (R<sub>th(j-c)</sub>) | 0.05 °C/W |
| Thermal Resistance Case to Heat Sink (R<sub>th(ch)</sub>) | 0.038 °C/W |
| Isolation Voltage (V<sub>isol</sub>) | 2500 V (1 minute) |
| Package Type | SEMITRANS® 3, D56 |
For more detailed information, please refer to the Semikron SKM400GB123D datasheet.