Home Fuji Electric 7MBR100XRE120-50 1200V 100A IGBT Module

Fuji Electric 7MBR100XRE120-50 1200V 100A IGBT Module

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Fuji Electric 7MBR100XRE120-50 1200V 100A IGBT Module

Fuji Electric 7MBR100XRE120-50 1200V 100A IGBT Module

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7MBR100XRE120-50 — Fuji Electric 1200 V / 100 A IGBT PIM (X-series)

The 7MBR100XRE120-50 is a compact, high-performance IGBT power module in Fuji Electric’s X-series PIM family, designed for demanding industrial power-electronics applications such as inverters, NC servo drives and UPS systems. It delivers a 1200 V collector-emitter rating and a continuous inverter collector current of 100 A (Tc = 100 °C), together with low VCE(sat) and integrated converter/brake circuitry for simplified system design and high overall power density. 

Built for reliability and efficiency, this module supports high junction temperatures (inverter/brake Tvj up to 175 °C) and provides substantial collector power dissipation (Pc ≈ 685 W for the inverter device), enabling robust thermal tolerance and long service life under heavy switching loads. Its gate-emitter rating is ±20 V, and the module includes converter average output capability and surge ratings that make it suitable for applications requiring short-term overload handling and dynamic braking. These characteristics help reduce conduction and switching losses while preserving durability in industrial environments.

Engineers will appreciate the module’s compact PIM package and practical mounting/integration features (PCB-mountable PIM with recommended M5 screw torque), making it straightforward to install into power assemblies and motor drive boards. Typical use cases include three-phase inverters, servo amplifiers, and uninterruptible power supplies where space, thermal performance, and dependable switching are critical. For system designers this part balances efficient switching performance, rugged thermal capability, and integrated converter/brake functions to shorten development time and improve system reliability.

Key specs

Parameter Symbol / Condition Value
Collector–Emitter voltage VCES 1200 V. 
Gate–Emitter voltage VGES ±20 V. 
Inverter collector current (continuous) IC (Tc = 100 °C) 100 A.
Inverter collector current (1 ms pulse) IC pulse 200 A (1 ms). 
Collector power dissipation (inverter, 1 device) PC 685 W. 
Brake IGBT collector power dissipation (1 device) PC (brake) 330 W.
Average output current (converter, 3-phase full-wave, Tc = 80 °C) IO 100 A. 
Surge (non-repetitive) current, t = 10 ms half sine IFSM (Tvj = 25 °C) 945 A (Tvj = 25 °C); 775 A (Tvj = 150 °C).
Junction temperature (max) Tvj 175 °C (Inverter / Brake); 150 °C (Converter). 
Isolation voltage (terminals / base) Viso (AC, 1 min) 2500 Vrms.
Recommended mounting screw torque Mounting (M5) 2.5 – 6.0 N·m (recommendation: 6.0 N·m shown).


For the authoritative, full set of electrical characteristics, switching curves, thermal resistances and mechanical drawings, please refer to the official Fuji Electric datasheet

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