K100E08N1 100A 80V N-channel MOSFET

K100E08N1 80 V 100 A N‑Channel MOSFET – TO‑220 Package

The K100E08N1 is an N‑Channel MOSFET rated for 80 V drain‑source voltage and continuous current up to 100 A, housed in a TO‑220 through‑hole package. Built with trench technology, it features exceptionally low on‑resistance (≤ 3.2 mΩ at V_GS = 10 V) for minimal conduction losses and efficient switching.

At 25 °C and V_GS = 10 V with ID = 50 A, the typical gate threshold voltage is between 2.0–4.0 V; the total gate charge is approximately 130 nC, and input capacitance is about 9000 pF. Typical switching includes reverse recovery time ~93 ns and recovery charge ~190 nC

Thermal dissipation reaches 255 W at case temperature; channel-to-case thermal resistance is 0.49 °C/W. The MOSFET is avalanche-tested for rugged operation and has a maximum junction temperature of 150 °C.

Key Specs

Voltage Rating: 80 V (V_DSS) Continuous Current: 100 A Power Dissipation: 255 W (case) On-Resistance: ≤ 3.2 mΩ @ V_GS = 10 V Gate Threshold Voltage: 2.0–4.0 V Gate Charge (Q_g @ ID=100 A): ~130 nC Input Capacitance (C_iss): ~9000 pF Reverse Recovery Time: ~93 ns Reverse Recovery Charge: ~190 nC Thermal Resistance (ch‑to‑case): ~0.49 °C/W Operating Junction Temp: Up to 150 °C Package: TO‑220, through‑hole Technology: Trench MOSFET Compliance: Avalanche tested, parameter matched variant available from Toshiba (TK100E08N1) and Inchange/DOINGTER