FGY100T65 650V 100A TO-247 IGBT

FGY100T65 650V 100A Field Stop Trench IGBT – TO-247 Package by ON Semiconductor

The FGY100T65 is a 650V, 100A IGBT built using Field Stop Trench technology, offering low conduction and switching losses with an integrated fast-recovery diode. It is suitable for high-efficiency switching in applications such as solar inverters, motor drives, uninterruptible power supplies, and HVAC systems.

Housed in a TO-247 package, the device supports efficient thermal dissipation and operates reliably in environments up to 175°C. With a typical saturation voltage of approximately 1.5 V at 100 A and a gate charge of 157 nC, it enables fast switching with reduced power loss. The device is capable of withstanding short-circuit conditions up to 5 µs and meets RoHS environmental standards.

Key Specs Voltage Rating: 650 V Current Rating: 100 A Continuous (200 A at 25 °C) Technology: Field Stop Trench IGBT Package: TO-247 V_CE(sat): ~1.5 V typical @ 100 A Gate Charge: 157 nC Switching: Fast turn-on/off with integrated anti-parallel diode Thermal Performance: Junction temperature up to 175 °C Applications: Solar Inverters, Motor Drives, HVAC, UPS, ESS Brand: ON Semiconductor Compliance: RoHS & Pb-Free