FGH80N60FD2 600V 40A IGBT – Field Stop II, TO-247 Package by onsemi
The FGH80N60FD2 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for fast-switching applications requiring high efficiency and low conduction losses. Rated at 600V and 40A continuous collector current, this device utilizes onsemi’s advanced Field Stop II technology to achieve an excellent balance of switching speed, low saturation voltage, and ruggedness under high-load conditions. With its low total gate charge and soft turn-off behavior, the FGH80N60FD2 is well-suited for high-frequency inverters, induction heating systems, UPS, welding equipment, and power factor correction circuits.
Housed in a TO-247 package, it offers excellent thermal performance and supports reliable operation in industrial environments. The integrated anti-parallel diode ensures smooth reverse recovery, further improving system efficiency in bridge configurations.
Key Specs – FGH80N60FD2 IGBT
Voltage Rating: 600V Current Rating: 40A Continuous (I\C\) Technology: Field Stop II IGBT Package: TO-247 V\CE(sat)\: 1.65V (typical) at 40A Switching: Fast, soft switching, low tail current Diode: Co-packaged fast recovery anti-parallel diode Applications: Inverters, UPS, PFC circuits, welders, induction heating Operating Temperature: –55 °C to +150 °C Brand: onsemi Compliance: RoHS & Pb-free
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