FGH75T65 650V 75A IGBT TO-247

FGH75T65 650V 75A IGBT Module

FGH75T65 is a high-efficiency 650V, 75A IGBT module from ON Semiconductor, designed for demanding industrial and power electronics applications. Featuring Field-Stop Trench technology, this NPT IGBT delivers fast switching, low conduction losses, and superior thermal performance, making it a top choice for engineers and system integrators working in motor drives, solar inverters, UPS systems, welding equipment, and renewable energy solutions. With a typical V\_CE(sat)\ of only 1.6V at 75A and a high maximum junction temperature of 175°C, it ensures minimal power dissipation and consistent operation even in thermally stressed environments.

The FGH75T65 IGBT module combines low switching losses with robust current handling, supporting up to 150A peak current and a total power dissipation of 455W. Its TO-247-3L or TO-247-4L package (variant dependent) allows for easy integration in compact circuit designs where performance and reliability are essential. This high-voltage IGBT transistor supports fast switching and precise power control, minimizing EMI and enabling high-efficiency system designs. ON Semiconductor’s manufacturing quality ensures consistent electrical characteristics across production batches, meeting stringent RoHS and Pb-Free compliance for global industrial standards.

Key Specs Voltage Rating: 650V Current Rating: 75A Continuous @ 100°C (150A Pulsed @ 25°C) Technology: N-Channel, Field-Stop Trench IGBT Package: TO-247-3L / TO-247-4L (variant dependent) V\_CE(sat)\: Typ. 1.6V @ 75A Switching: Fast switching with low switching losses Thermal Performance: 175°C TJ max; R\_θJC\ ≈ 0.4°C/W Power Dissipation: 455W max @ 25°C Applications: Inverters, Motor Drives, UPS Systems, Telecom Power, Welding Equipment, Renewable Energy Brand: ON Semiconductor Compliance: RoHS, Pb-Free