CPV362M4U
The CPV362M4U is an UltraFast IGBT SIP module designed for three-phase inverter and motor-drive applications. It features a collector-to-emitter voltage rating of 600 V and offers continuous collector currents of 7.2 A at 25°C and 3.9 A at 100°C. The module is capable of handling pulsed collector currents up to 22 A, making it suitable for mid-voltage power conversion tasks.
Constructed with HEXFRED™ soft ultrafast diodes and an insulated-metal-substrate (IMS-2) package, the CPV362M4U ensures low thermal resistance and simplifies PCB mounting. The module's thermal metrics include a junction-to-case thermal resistance of approximately 5.5 °C/W for each IGBT and a case-to-sink value of 0.10 °C/W. It also provides an isolation rating of 2500 VRMS for safety in industrial systems.
Optimized for high switching performance, the CPV362M4U supports operating frequencies beyond 5 kHz. In typical motor-drive scenarios, it delivers approximately 4.6 A RMS per phase, equating to about 1.3 kW total output at a modulation depth of 115%. These characteristics make it a reliable and efficient choice for commercial drives, small industrial inverters, and other embedded power-electronics applications.
Key Specifications
| Specification | Value | Conditions / Notes |
|---|---|---|
| Collector-to-Emitter Voltage (VCES) | 600 V | Breakdown rating. |
| Continuous Collector Current (IC) | 7.2 A @ TC = 25°C; 3.9 A @ TC = 100°C | Thermal case-dependent ratings. |
| Pulsed Collector Current (ICM) | 22 A | Pulsed capability. |
| Maximum Power Dissipation (PD) | 23 W @ TC = 25°C (9.1 W @ TC = 100°C) | Datasheet thermal limits. |
| VCE(on) (typ / max) | ~1.70 V / 1.95 V | Measured at VGE = 15 V. |
| Gate-to-Emitter Voltage (VGE) | ±20 V | Absolute rating. |
| Isolation Voltage | 2500 VRMS (1 minute) | Safety isolation. |
| Thermal Resistance (junction-to-case) | IGBT: ~5.5 °C/W; Diode: ~9.0 °C/W | One device in conduction. |
| Case-to-Sink Thermal Resistance | 0.10 °C/W | Flat, greased surface. |
| Diode Forward Current (IF) | 3.4 A (continuous @ TC = 100°C); 22 A (max) | Complementary diode ratings. |
| Gate Charge (Qg) | 31–47 nC | Typical switching data at specified conditions. |
| Switching Losses (Eon / Eoff) | 0.13 mJ / 0.07 mJ | Energy losses include "tail" and diode reverse recovery. |
| Package | IMS-2 SIP module, PCB mount, 13-pin | Fully isolated IMS package for compact mounting. |
| Typical Application Performance | ~4.6 A RMS per phase (≈1.3 kW total) | TC = 90°C, TJ = 125°C, Vdc = 360 V, PF = 0.8, modulation depth 115%. |
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