STW12NK90Z
The STW12NK90Z is a 900 V N‑Channel MOSFET from STMicroelectronics, designed for high-voltage power electronics. Built with SuperMESH™ technology, it combines low on‑resistance, fast switching, and high-voltage endurance, making it suitable for SMPS, industrial motor drives, and energy storage systems. Its TO-247 package provides stable thermal performance under heavy load, ensuring reliable operation in demanding environments.
This MOSFET features low gate charge and reduced intrinsic capacitances, enabling high-speed switching with minimal energy loss. Its high dv/dt capability and avalanche tolerance allow it to handle voltage spikes and rapid load changes, making it suitable for solar inverters, UPS systems, and energy-storage converters. The SuperMESH™ design keeps conduction losses low and maintains consistent thermal behavior during operation.
STW12NK90Z is suitable for circuits requiring high-voltage endurance, low conduction loss, and fast switching. The built-in gate Zener diode protects against transient events, while its 230 W power dissipation rating supports continuous operation. Applications include solar inverters, industrial drives, UPS supplies, and motor control boards.
Key Specs
| Parameter | Value |
|---|---|
| Drain‑Source Voltage (Vₙ₋DSS) | 900 V |
| On-State Resistance R<sub>DS(on)</sub> (max) | < 0.88 Ω (typical 0.72 Ω) |
| Continuous Drain Current (I<sub>D</sub>) | 11 A (at TC = 25 °C) |
| Power Dissipation (Pₜₒₜ) | 230 W |
| Package / Case | TO‑247 (through‑hole) |
| Gate Charge (Qg) | Typical 152 nC @ 10 V |
| dv/dt Capability | High, suitable for fast switching |
| Gate‑Source Voltage (V<sub>GS</sub> max) | ±30 V |
| Operating Temperature Range | –55 °C to +150 °C (junction) |
| Gate Protection | Built-in Zener diode |
For more detailed information, refer to the official STMicroelectronics datasheet: STW12NK90Z Datasheet PDF.
