NCE80TD65 — 650V / 80A Trench FS II IGBT (TO-247)
The NCE80TD65 is a high-performance Trench FS II IGBT engineered for demanding power-electronics systems where fast switching, low conduction loss and robust thermal performance matter. Rated for a 650 V collector–emitter voltage and designed to handle high pulse currents, it delivers very low VCE(sat) (typ. ~1.7 V at IC = 80 A, VGE = 15 V) and tight parameter distribution that help keep conduction losses low and systems thermally stable. These electrical characteristics make the device especially suitable for solar inverters, industrial motor drives, UPS systems and induction heating where efficiency and reliable long-term operation are essential.
Built in a TO-247 through-hole package with excellent junction-to-case thermal resistance, the NCE80TD65 supports high power density and effective heat dissipation in real-world assemblies, and its optimized gate structure reduces switching stress and EMI during transitions. It supports safe paralleling and short-circuit survivability (VGE = 15 V conditions), enabling designers to scale modules for higher current systems while maintaining stable behavior under heavy loads. Typical switching performance is competitive — gate charge and switching-loss figures are provided in the official datasheet to help designers size drive circuits and snubbers accurately.
From an applications and reliability perspective, the device offers a wide operating junction range (−55 °C to +175 °C), low thermal resistance (RθJC ≈ 0.38 °C/W for the IGBT) and substantial power dissipation capability at case temperature, which together reduce thermal stress and extend MTBF in industrial environments. Whether the design priority is lowest possible conduction drop, compact thermal design, or predictable parallel operation in multi-device power stages, the NCE80TD65 provides a balanced, efficient solution — refer to the official datasheet for full test conditions and application notes so you can match drive and thermal design to your system requirements.
Key specs
| Parameter |
Value |
| Model |
NCE80TD65 (NCE80TD65BT) |
| Collector-Emitter Voltage, VCES |
650 V. |
| Collector Current (continuous) |
80 A (at TC = 100 °C); 160 A (at TC = 25 °C, pulsed limits listed in datasheet). |
| Collector-Emitter Saturation Voltage, VCE(sat) |
Typ. 1.7 V (IC = 80 A, VGE = 15 V, Tj = 25 °C); Max 1.9 V specified. |
| Gate-Emitter Voltage |
±30 V (max rating) |
| Total Gate Charge, Qg |
Typ. 331 nC (VCC = 480 V, IC = 80 A, VGE = 15 V). |
| Thermal Resistance, RθJC (IGBT) |
0.38 °C/W (junction-to-case). |
| Power Dissipation (TC = 25 °C) |
390 W. |
| Diode forward voltage, VFM |
Typ. 1.75 V (IF = 80 A). |
| Short-circuit withstand time |
tSC ≤ 5 µs under specified test conditions (VGE = 15 V, VCC ≤ 400 V). |
| Package / Mounting |
TO-247, through-hole. |
| Operating junction & storage temp. |
−55 °C to +175 °C. |