SEMiX151GD126HDS IGBT Module
The SEMiX151GD126HDS is a robust 1200V, 100A IGBT module engineered for demanding industrial applications. Built upon advanced Trench IGBT 3 technology, this module offers exceptional switching performance and low conduction losses, making it ideal for high-efficiency motor drives, inverters, and uninterruptible power supplies (UPS).
Designed with a compact SEMiX 13 housing and PressFIT contact technology, the SEMiX151GD126HDS ensures reliable mechanical and electrical connections, simplifying assembly and enhancing system longevity. Its homogeneous silicon (Si) trench technology provides a positive temperature coefficient for the collector-emitter saturation voltage (VCE(sat)), ensuring stable operation under varying thermal conditions. The module's high short-circuit capability further enhances system protection and reliability.
Whether you're developing high-power motor drives or sophisticated power conversion systems, the SEMiX151GD126HDS delivers the performance, durability, and efficiency required for modern industrial applications.
Key Specifications
| Specification | Value |
|---|---|
| Module Type | IGBT Module |
| Voltage Rating (V_CEO) | 1200 V |
| Current Rating (I_C) | 100 A |
| Power Dissipation (P_D) | 431 W |
| Collector-Emitter Saturation Voltage (V_CE(sat)) | 1.7 V @ 100 A |
| Gate-Emitter Threshold Voltage (V_GEth) | 5.7 V |
| Maximum Junction Temperature (T_j) | 150°C |
| Package Type | SEMiX 13 |
| Contact Technology | PressFIT |
| Substrate Material | Homogeneous Si Trench |
| Weight | 290 g |
For more detailed information, please refer to the Semikron datasheet.