Infineon FS100R12KT4G-B11 IGBT Module
The Infineon FS100R12KT4G-B11 is a high-performance IGBT module designed to meet the demanding requirements of industrial and commercial power electronics applications. With a collector-emitter voltage (V_CES) rating of 1200 V and a nominal collector current (I_Cnom) of 100 A, this module offers robust performance suitable for power-intensive systems. Its low switching losses contribute to enhanced system efficiency, making it an ideal choice for applications requiring reliable and efficient power conversion.
Designed in the EconoPACK™ 3 housing with PressFIT technology, the FS100R12KT4G-B11 ensures a compact footprint of 122 mm x 62 mm, facilitating easy integration into various systems. The module's rugged construction and advanced features make it well-suited for applications such as solar inverters, uninterruptible power supplies (UPS), and motor drives, where efficiency and reliability are paramount.
By leveraging Infineon's cutting-edge technology, the FS100R12KT4G-B11 delivers exceptional performance and durability, ensuring long-term reliability in demanding environments. Its advanced design and features make it a preferred choice for professionals seeking high-quality power conversion solutions.
Key Specifications
| Specification | Value |
|---|---|
| Collector-Emitter Voltage (V_CES) | 1200 V |
| Nominal Collector Current (I_Cnom) | 100 A |
| Maximum Collector Current (I_Cmax) | 200 A |
| Saturation Voltage (V_CE(sat)) | ≤ 2.2 V |
| Gate-Emitter Threshold Voltage (V_GE(th)) | 6.4 V |
| Maximum Gate-Emitter Voltage (V_GES) | ±20 V |
| Maximum Gate-Emitter Leakage Current (I_GE) | 0.1 µA |
| Package Type | EconoPACK™ 3 |
| Mounting Type | PressFIT |
| Dimensions (L x W x H) | 122 mm x 62 mm x 21.3 mm |
| Weight | 10.58 oz (300 g) |
For more detailed information, please refer to the Infineon FS100R12KT4G-B11 datasheet.