Infineon FP75R12KT4 – 1200V 75A EconoPIM™3 IGBT Module
The Infineon FP75R12KT4 is an IGBT power module from the EconoPIM™3 family, specified for 1200 V and 75 A operation. It uses Trench/Fieldstop IGBT4 technology combined with EmCon4 diodes to achieve low switching and conduction losses. The module integrates an NTC temperature sensor and is built with a copper baseplate for stable thermal performance. It is widely applied in drives, motor control systems, UPS units, and other industrial power conversion equipment.
The device is designed with a junction temperature range of −40 °C to +150 °C, allowing reliable operation under different load and ambient conditions. It supports repetitive peak collector currents up to 150 A and features a positive temperature coefficient of VCE(sat), which assists in current sharing. The solder-contact construction and EconoPIM™3 format make it suitable for both press-in PCB and screw mounting.
The FP75R12KT4 has defined electrical and thermal characteristics to simplify system integration. Parameters such as low thermal resistance, predictable saturation voltage, and diode characteristics ensure efficient performance. Its mechanical robustness and compact format make it suitable for industrial and commercial applications that require consistent electrical behavior.
Key Specs
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Part Number | FP75R12KT4 |
| Package / Module Family | EconoPIM™3 (AG-ECONO3-3) |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Nominal Collector Current (IC nom) | 75 A (TC = 95 °C) |
| Repetitive Peak Collector Current (ICRM) | 150 A (tP = 1 ms) |
| VCE(sat) | 1.85 V @ 75 A, 25 °C |
| Gate-Emitter Voltage (VGES) | ±20 V |
| Operating Junction Temperature (Tvj op) | −40 … +150 °C |
| Thermal Resistance (RthJC per IGBT) | 0.390 K/W |
| Diode Forward Voltage (VF) | 1.70 V @ 75 A, 25 °C |
| Mounting | Press-in PCB / Screw mount |
| Weight | ~300 g |
For detailed specifications, please refer to the FP75R12KT4 Datasheet (PDF).
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