7MBR35VM120-50
7MBR35VM120-50 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module from Fuji Electric's V Series. Designed for demanding industrial applications, this module offers exceptional efficiency, reliability, and versatility. With a collector-emitter voltage rating of 1200V and a collector current rating of 35A, it is well-suited for high-power applications requiring robust performance.
One of the standout features of the 7MBR35VM120-50 is its low saturation voltage (V_CE(sat)), which minimizes conduction losses and enhances overall system efficiency. The module's compact M719 package ensures a space-saving solution without compromising on performance. Additionally, it boasts high thermal endurance, with an operating junction temperature of up to 150°C, ensuring reliability under high thermal stress conditions.
The 7MBR35VM120-50 is ideal for various industrial applications, including motor drives, uninterruptible power supplies (UPS), renewable energy systems, industrial inverters, and welding equipment. Its robust design and high efficiency make it a preferred choice for OEMs and maintenance teams seeking reliable power solutions.
Key Specifications:
| Parameter | Specification |
|---|---|
| Manufacturer | Fuji Electric |
| Part Number | 7MBR35VM120-50 |
| Package Type | M719 |
| Terminal Type | Solder pins |
| Collector-Emitter Voltage | 1200V |
| Collector Current | 35A |
| Saturation Voltage (V_CE(sat)) | Low |
| Operating Junction Temp. | Up to 150°C |
| Operating Storage Temp. | -40°C to +125°C |
| Weight | 200g |
| Environmental Compliance | Lead-free, RoHS compliant |
For more detailed information, please refer to the Fuji Electric datasheet.
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