BSM100GD120DN2 IGBT Power Module
The BSM100GD120DN2 is a robust IGBT (Insulated Gate Bipolar Transistor) power module engineered for high-efficiency power conversion in industrial and commercial applications. With a collector-emitter voltage rating of 1200V and a continuous collector current of 100A, this module is designed to handle demanding power requirements. Its compact Econopack 3 package ensures efficient heat dissipation and mechanical stability, making it suitable for integration into space-constrained designs.
This module offers several advantages, including low switching losses and high efficiency, which are crucial for reducing energy consumption and improving system performance. The BSM100GD120DN2 is equipped with fast free-wheel diodes, enhancing its capability to handle inductive loads and ensuring smooth operation in motor drives and inverters. Its wide operating temperature range of -40°C to +125°C ensures reliable performance even in harsh environmental conditions.
The BSM100GD120DN2 is ideal for applications such as motor control, renewable energy systems, and power supplies. Its versatility and high power handling make it a preferred choice for engineers seeking a reliable and efficient solution for power electronics. Whether used in industrial automation or energy conversion systems, this module delivers the performance and durability required for demanding applications.
Key Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCE) | 1200 V |
| Continuous Collector Current (IC) | 100 A |
| Pulsed Collector Current (ICpuls) | 200 A |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.5 V |
| Power Dissipation (Ptot) | 680 W |
| Operating Temperature Range | -40°C to +125°C |
| Package Type | Econopack 3 |
| Module Configuration | 3-phase full-bridge |
| Gate-Emitter Voltage (VGE) | ±20 V |
| Gate-Emitter Leakage Current (IGES) | 400 nA |
For more detailed information, please refer to the Infineon datasheet.
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