STMicroelectronics 60H65DFB 650V 60A IGBT
Regular price
Rs.350.00
STMicroelectronics 60H65DFB
The STMicroelectronics 60H65DFB (STGW60H65DFB / STGWA60H65DFB / STGWT60H65DFB) is a trench-gate field-stop IGBT designed for 650 V operation with a continuous current rating of 60 A at TC = 100 °C, and 80 A at TC = 25 °C when limited by bond wires. It offers a typical VCE(sat) of 1.6 V at 60 A and supports high-speed switching for use in power-conversion systems. The component is available in TO-247, TO-247 long-lead, and TO-3P package variants, and is rated for a maximum junction temperature of 175 °C.
The device structure provides tight parameter distribution and a slightly positive VCE(sat) temperature coefficient, supporting parallel operation when appropriate thermal design is applied. Integrated features include a fast soft-recovery antiparallel diode, low tail current behavior, and low junction-to-case thermal resistance values of 0.4 °C/W (IGBT) and 1.14 °C/W (diode). These characteristics support stable switching performance and predictable thermal behavior in continuous operation.
The 60H65DFB is suitable for high-power energy conversion systems such as photovoltaic inverters, UPS systems, AC-DC converters, motor drives and welding equipment. It is intended for applications where a balance between conduction losses, switching losses, and thermal stability is required. Refer to the manufacturer datasheet for electrical curves, switching data, and design considerations.
Key Specs
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Part numbers / Packages | STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB — TO-247 / TO-247 long leads / TO-3P |
| Collector-Emitter voltage (VCES) | 650 V |
| Continuous collector current (IC) | 80 A @ 25 °C (bond-wire limit); 60 A @ 100 °C |
| Pulsed collector / forward current | 240 A |
| Typical VCE(sat) | ~1.6 V @ 60 A |
| Total power dissipation (PTOT) | 375 W @ 25 °C |
| Maximum junction temperature (TJ) | −55 °C to 175 °C |
| Storage temperature (TSTG) | −55 °C to 150 °C |
| Gate-Emitter voltage (VGE) | ±20 V (±30 V transient, tp ≤ 10 µs) |
| Thermal resistance (RthJC IGBT / diode) | 0.4 °C/W / 1.14 °C/W |
| Integrated diode | Fast soft-recovery antiparallel diode |
| Applications | Solar inverters, UPS, AC-DC conversion, motor drives, welding equipment |
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