G40H65DFB 650V 40A IGBT

G40H65DFB IGBT – 650V 40A

The G40H65DFB IGBT is a 650V, 40A power transistor from STMicroelectronics engineered with trench gate field-stop technology to deliver superior energy efficiency, reduced conduction losses, and fast switching performance. Designed for high-reliability applications such as industrial motor drives, solar inverters, EV powertrains, and uninterruptible power supplies (UPS), this IGBT ensures robust performance in harsh electrical and thermal environments.

With its compact TO-247 package and low saturation voltage, the G40H65DFB offers excellent thermal conductivity and efficient power handling in high-frequency switching applications. Whether you're powering smart grid systems, factory automation, or renewable energy platforms like wind and solar, this IGBT supports stable, cost-effective performance with minimal energy loss.

Trusted by engineers across Pakistan’s industrial and energy sectors, the G40H65DFB IGBT meets the demands of modern high-voltage systems where durability, compactness, and efficiency are critical.

Key Specs Type: Trench Field-Stop IGBT Voltage Rating: 650V Current Rating: 40A Technology: Trench Gate Field-Stop Package: TO-247 Switching: High-Speed Switching Applications: EV Charging, Solar Inverters, Motor Drives, UPS Systems, Smart Grids Operating Temp Range: -40°C to +150°C