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MRFE6VP61K25H power transistor with white ceramic body and gold metal tabs from The Component Centre

MRFE6VP61K25H 1250W 50V RF Power LDMOS Transistor

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MRFE6VP61K25H power transistor with white ceramic body and gold metal tabs from The Component Centre

MRFE6VP61K25H 1250W 50V RF Power LDMOS Transistor

Rs.0.00

MRFE6VP61K25H 1250W 50V RF Power LDMOS Transistor


MRFE6VP61K25H is a rugged RF Power LDMOS transistor optimized for high-efficiency wideband applications from 1.8 MHz to 600 MHz. Developed by NXP Semiconductors, this 50V LDMOS transistor delivers up to 1250W continuous wave (CW) output power, making it ideal for RF amplifier designs in FM broadcast transmitters, industrial RF systems, VHF/UHF communications, and military-grade power amplifiers. The MRFE6VP61K25H offers outstanding linear gain, typically around 23 to 25 dB, with drain efficiencies exceeding 75%, allowing engineers to design compact, high-output, and thermally reliable RF transmitters. Built using advanced VHV6E LDMOS technology, the MRFE6VP61K25H is specifically engineered for extreme ruggedness and long operating life, capable of surviving VSWR conditions greater than 65:1 without damage or degradation. Its 50V operation supports higher output with reduced current demand, enhancing thermal efficiency in both Class AB and Class C amplifier architectures. The ceramic NI-1230H-4S flange package provides excellent heat dissipation for CW and pulsed RF power environments. The MRFE6VP61K25H is internally matched for optimal broadband performance, allowing integration into analog and digital RF transmission systems. Whether deployed in high-power FM radio stations, VHF broadcast towers, or industrial laser drivers, the MRFE6VP61K25H RF Power LDMOS transistor delivers the combination of power, efficiency, and ruggedness that engineers require for dependable, high-frequency RF amplification.

Key Specs

Frequency Range: 1.8 MHz to 600 MHz Output Power: 1250W CW (typical) Drain Voltage: 50V Gain: 23–25 dB (typical at 230 MHz) Efficiency: Up to 79% VSWR Tolerance: >65:1 (no failure) Package: NI-1230H-4S flange Operating Temp: Up to 150°C (case) Applications: FM Broadcast, Industrial RF Power, VHF/UHF Amplifiers, Military RF Systems Transistor Type: RF Power LDMOS Manufacturer: NXP Semiconductors Compliance: RoHS

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