The PMBT2907A by Nexperia is a PNP switching transistor designed for power electronics applications, offering reliable performance and broad industrial applicability. Housed in the compact SOT‑23 package, it can handle currents up to 600 mA and withstand voltages of −60 V, making it suitable for switching and signal control tasks in commercial and industrial circuits. Its low saturation voltage (VCE(sat) ≈ 400 mV) and high transition frequency (200 MHz) support efficient operation in high-frequency applications.
This transistor maintains stable performance across an extended operating temperature range from –65 °C to +150 °C, ensuring consistent functionality in harsh or thermally challenging environments. Its design supports efficient switching and signal amplification while minimizing power loss.
The PMBT2907A is suitable for switching and linear amplification roles in industrial control modules, power management circuits, and analog signal applications. Its combination of current handling, voltage tolerance, and thermal resilience provides reliable operation in circuits requiring consistent switching performance and durability.
Key Specifications
Parameter
Specification
Notes / Conditions
Manufacturer
Nexperia
—
Type
PNP switching transistor
—
Package
SOT‑23 (TO‑236AB)
Surface-mounted 3-pin package
Collector–Emitter Voltage (V₍CEO₎)
–60 V
Absolute maximum, open base
Collector Current (I₍C₎)
–600 mA
Maximum DC collector current
Power Dissipation (P₍tot₎)
250 mW
When properly heatsunk on PCB
DC Current Gain (h₍FE₎)
100 (min) – 300 (max)
VCE = −10 V, IC = −150 mA
Transition Frequency (fₜ)
~200 MHz
High-frequency response
Collector Cutoff Current (ICBO)
~10 nA
Leakage current at cut-off
V₍CE(sat)₎
~400 mV
Saturation voltage dependent on base & collector current
Operating Temperature
–65 °C … +150 °C
Junction temperature rating
For more detailed information, including full electrical characteristics and pin-out diagrams, please refer to the Nexperia PMBT2907A datasheet: Download the datasheet.
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