MJD45H11 80V 8A TO-252 PNP Power Transistor
Regular price
Rs.150.00
Sale price
Rs.170.00
MJD45H11
The MJD45H11 is a high-power PNP bipolar transistor designed for switching and linear power applications. It is housed in a TO-252 (DPAK / SOT-428C) surface-mount package and provides an 80 V collector-emitter rating with up to 8 A continuous collector current. It is suitable for power amplifiers, motor drivers, SMPS output stages, and industrial switching circuits that require thermal and current handling.
The transistor has a low saturation voltage and fast switching characteristics, which reduce conduction losses and improve system efficiency in commercial and automotive environments. It supports a peak collector current of 16 A and a total power dissipation of 20 W (at TC = 25 °C), with a maximum junction temperature of 150 °C. Thermal resistance (junction-to-case) is specified to assist in board-level thermal design.
The MJD45H11 complements the MJD44H11 NPN device and is available in tape-and-reel formats for automated assembly. Electrical characteristics include a low VCE(sat) near 1 V at high currents and stable DC current gain (hFE) across typical operating points, providing predictable performance in switching and linear circuits.
Key Specs
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (V<sub>CE0</sub>) | 80 V |
| Collector Current (I<sub>C</sub>) | 8 A (continuous) |
| Collector Peak Current (I<sub>CM</sub>) | 16 A (pulse) |
| Total Power Dissipation (P<sub>TOT</sub>) | 20 W (at T<sub>C</sub>=25 °C) |
| V<sub>CE(sat)</sub> | ≈1.0 V at I<sub>C</sub>=8 A, I<sub>B</sub>=0.4 A (typical) |
| Emitter-Base Voltage (V<sub>EB0</sub>) | 5 V |
| DC Current Gain (h<sub>FE</sub>) | ~60 at I<sub>C</sub>=2 A, V<sub>CE</sub>=1 V (typical) |
| Transition Frequency (f<sub>T</sub>) | See datasheet curves |
| Thermal Resistance (R<sub>θJC</sub>) | 6.25 °C/W (junction-to-case) |
| Max. Junction Temperature (T<sub>J</sub>) | 150 °C |
| Package | DPAK / TO-252 (SOT-428C) surface-mount |
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