IRF740 400 V 10 A N Channel Power MOSFET
Regular price
Rs.75.00
IRF740PBF
The IRF740PBF from Vishay Siliconix is a high‑performance N‑channel power MOSFET designed for industrial and commercial power electronics. With a 400 V drain‑to‑source voltage rating, fast switching capability, and a rugged design, it is suitable for power conversion, motor control, and high‑voltage switching circuits. The device provides reliable operation in demanding electrical environments.
This MOSFET features a low on‑state resistance (R<sub>DS(on)</sub>) of 0.55 Ω (max at V<sub>GS</sub>=10 V), which reduces conduction losses and improves thermal performance. Its fast switching and moderate gate charge (63 nC max) simplify gate‑drive requirements. The device can handle transient voltage spikes thanks to its dynamic dV/dt rating and repetitive avalanche capability.
The IRF740PBF operates reliably over a junction and storage temperature range of ‑55 °C to +150 °C. Its TO‑220AB package provides effective heat dissipation, with maximum power dissipation of 125 W at 25 °C. It is suitable for applications such as industrial motor drives, high‑voltage power supplies, and commercial UPS systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain‑Source Voltage | V<sub>DSS</sub> | 400 | V |
| Max On‑Resistance (V<sub>GS</sub>=10 V) | R<sub>DS(on)</sub> | 0.55 | Ω |
| Continuous Drain Current (T<sub>C</sub>=25 °C, V<sub>GS</sub>=10 V) | I<sub>D</sub> | 10 | A |
| Gate‑Source Voltage | V<sub>GS</sub> | ±20 | V |
| Total Gate Charge (max) | Q<sub>g</sub> | 63 | nC |
| Maximum Power Dissipation (T<sub>C</sub>=25 °C) | P<sub>D</sub> | 125 | W |
| Operating Junction/Storage Temperature | T<sub>J</sub>, T<sub>stg</sub> | ‑55 to +150 | °C |
| Single Pulse Avalanche Energy | E<sub>AS</sub> | 520 | mJ |
| Thermal Resistance Junction‑to‑Case (Drain) | R<sub>θJC</sub> | 1.0 | °C/W |
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