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HY3215 150V 120A N Channel MOSFET

Regular price Rs.350.00
Sale price Rs.355.00
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HY3215 Mosfet in Protective Packaging for Efficient Power Management and Switching Applications
HY3215 150V 120A N Channel MOSFET
Regular price Rs.350.00
Sale price Rs.355.00

HY3215

The HY3215 is a 150 V, 120 A N-channel enhancement-mode MOSFET developed for high-current switching and power-management applications. Its low on-state resistance of 12 mΩ (typ., V_GS = 10 V), avalanche-tested design, and high thermal tolerance support stable operation in inverter modules, motor-control units, and industrial power circuits. Multiple package options including TO-220FB, TO-263, and TO-3PS formats allow integration into compact or high-dissipation layouts.

With a maximum junction temperature of 175 °C, the HY3215 maintains consistent performance under elevated thermal loads. It supports continuous drain current ratings of 120 A at T_C = 25 °C and 84 A at T_C = 100 °C, along with a pulsed drain capability up to 480 A. Power-dissipation limits of 300 W (T_C = 25 °C) and 150 W (T_C = 100 °C) make it suitable for use in inverter power stages, DC–DC converters, and general switching equipment where predictable electrical behaviour is required.

The HY3215 includes defined parameters for breakdown voltage, gate threshold range, diode conduction characteristics, and reverse-recovery behaviour, enabling accurate modelling of conduction and switching losses. Its 100% avalanche testing and RoHS-compliant versions help meet standard design requirements. For circuit development, PCB thermal planning, and package mechanical data, refer to the full device datasheet.

Key Specs

Parameter Value
Part number HY3215P / HY3215M / HY3215B / HY3215PS / HY3215PM
Device type N-Channel enhancement MOSFET
Drain-Source Voltage (V_DSS) 150 V
Continuous Drain Current (T_C = 25 °C) 120 A
Continuous Drain Current (T_C = 100 °C) 84 A
Pulsed Drain Current (I_DM) 480 A
On-Resistance R_DS(ON) (typ.) 12 mΩ @ V_GS = 10 V
Gate Threshold Voltage V_GS(th) 3.0–5.0 V
Gate-Source Voltage (V_GSS) ±25 V
Maximum Junction Temperature (T_J) 175 °C
Power Dissipation (T_C = 25 °C) 300 W
Power Dissipation (T_C = 100 °C) 150 W
Thermal Resistance R_θJC 0.5 °C/W
Thermal Resistance R_θJA 62.5 °C/W
Avalanche Energy (E_AS) 1025 mJ
Diode Forward Voltage (V_SD) 0.81 V @ 60 A
Reverse Recovery Time (t_rr) 46 ns
Available packages TO-220FB (P/M), TO-263-2L (B), TO-3PS-3L (PS/PM)

We dispatch all orders through Leopard Courier and TCS, while bulk or heavy shipments are sent via cargo (bilty) for safer handling and better rates. Standard delivery time is 2–3 working days for both courier and cargo deliveries, depending on your location. Orders are dispatched within 24 hours after payment confirmation, and the tracking number is shared on WhatsApp once shipped. Shipping charges depend on parcel weight and destination, and may be waived for bulk or corporate orders. Please ensure your contact details and address are accurate to avoid delays. For urgent delivery or specific shipping requirements, contact us directly on WhatsApp at 0303 56888 44.

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