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Renesas RN75H65 650V 75A IGBT TO-247A

Regular price Rs.300.00
Sale price Rs.315.00
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Renesas RN75H65 650V 75A IGBT TO-247A - The Component Centre
Renesas RN75H65 650V 75A IGBT TO-247A
Regular price Rs.300.00
Sale price Rs.315.00

RN75H65 – 650 V / 75 A IGBT

The RN75H65 is an Insulated Gate Bipolar Transistor (IGBT) from Renesas, designed for high-efficiency power switching applications. Using advanced 8th-generation trench-gate, thin-wafer (G8H) technology, it features a low typical collector-emitter saturation voltage of 1.5 V at 75 A. The device includes a fast-recovery diode within its TO‑247A package, reducing circuit complexity and supporting reliable operation in power electronics systems.

This IGBT operates at a maximum junction temperature of 175 °C, suitable for UPS systems, welding equipment, photovoltaic inverters, and power converters. Its high-speed switching capabilities and thermal performance make it suitable for demanding industrial and commercial applications.

The RN75H65 provides low conduction losses, stable short-pulse handling up to 300 A, and optimized switching energy. Its combination of performance, efficiency, and durability allows integration into various power electronics designs while maintaining consistent operation under high-current and high-voltage conditions.


Key Specs

Parameter Value
Part Number RBN75H65T1FPQ-A0 (RN75H65)
Collector–Emitter Voltage (VCES) 650 V 
Continuous Collector Current (IC) 75 A @ 100 °C 
Peak Collector Current 300 A (short pulse) 
Saturation Voltage (VCE(sat)) ~1.5 V typ.
Built‑in Diode Fast-recovery diode 
Maximum Junction Temperature (Tj) 175 °C 
Package TO‑247A
Thermal Resistance (J‑to‑C) 0.48 °C/W (IGBT), 0.73 °C/W (Diode)
Switching Energy (Eon / Eoff) ~1.6 mJ / ~1.0 mJ @ 400 V, 75 A 
Diode Reverse Recovery Time (trr) ~72 ns 


For detailed technical information, refer to the Renesas RN75H65 datasheet.

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