Infineon FSR150R12KE3 1200V, 150A IGBT Module
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Infineon FSR150R12KE3 1200V, 150A IGBT Module
FSR150R12KE3 IGBT Power Module – 1200 V, 150 A
The FSR150R12KE3 (also known as FS150R12KE3) is a robust IGBT (Insulated Gate Bipolar Transistor) module designed for industrial-grade performance. Rated at 1.2 kV (1200 V) collector-emitter voltage in a six-pack configuration, it delivers a continuous current of up to 150 A, ideal for medium to high-power switching applications.
With Trenchstop IGBT3 technology, this module reduces conduction losses with a typical saturation voltage around 1.7 V, while supporting efficient thermal performance up to 700 W power dissipation.
Its dependable design makes it suitable for motor drives, inverters, UPS systems, welding equipment, and renewable energy systems—offering the combination of durability and compact performance that industrial power applications demand.
Key Specifications
| Feature | Specification |
|---|---|
| Collector-Emitter Voltage (V<sub>CEO</sub>) | 1200 V |
| Continuous Collector Current (I<sub>C</sub>)@25 °C | 150 A |
| Collector-Emitter Saturation Voltage (V<sub>CE(sat)</sub>) | ~1.7 V (typical) |
| Power Dissipation (P<sub>tot</sub>) | 700 W (typical) |
| Package / Configuration | Six-pack IGBT module |
| Technology | Trenchstop IGBT3 |
| Gate-Emitter Voltage (V<sub>GE</sub>) | ±20 V |
| Operating Temperature Range | -40 °C to +125 °C (typical) |
| Applications | Motor Drives, Inverters, UPS, Welding, Renewable Energy |
