Infineon BSM150GB120DN2 1200V, 150A IGBT Module
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Infineon BSM150GB120DN2 1200V, 150A IGBT Module
BSM150GB120DN2 IGBT Power Module – 1200V, 150A
The BSM150GB120DN2 is an IGBT (Insulated Gate Bipolar Transistor) power module designed for reliable use in industrial and commercial power electronics. It provides a collector-emitter voltage of 1200V and a continuous collector current of 150A, supporting stable performance in medium to high-power switching tasks.
The module offers low switching and conduction losses, which helps improve efficiency and reduce power waste. Its solid construction and effective thermal design allow it to operate dependably under demanding electrical and thermal conditions.
The BSM150GB120DN2 is suitable for motor drives, inverters, UPS systems, welding equipment, and renewable energy systems. Its compact design and dependable performance make it a practical choice for applications that require durability, efficiency, and long operating life.
🔹 Key Specs
| Feature | Specification |
|---|---|
| Collector-Emitter Voltage (Vceo) | 1200V |
| Continuous Collector Current (Ic) | 150A |
| Collector-Emitter Saturation Voltage (Vce(sat)) | ~1.7V – 2.0V (typical) |
| Power Dissipation (Ptot) | ~780W (typical) |
| Package Type | IGBT Module |
| Technology | Field-Stop IGBT |
| Gate-Emitter Voltage (Vge) | ±20V |
| Operating Temperature Range | -40°C to +150°C |
| Applications | Motor Drives, Inverters, UPS, Welding Equipment, Renewable Energy Systems |
