Home Infineon FF200R12KT4 1200V, 200A IGBT Module
FF200R12KT4 Power Module on a Scale Showing Weight for Electronic Component Applications

Infineon FF200R12KT4 1200V, 200A IGBT Module

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FF200R12KT4 Power Module on a Scale Showing Weight for Electronic Component Applications

Infineon FF200R12KT4 1200V, 200A IGBT Module

Rs.0.00

FF200R12KT4 IGBT Power Module – 1200 V, 200 A

The FF200R12KT4 is a robust IGBT (Insulated Gate Bipolar Transistor) module from Infineon, designed for heavy-duty industrial and commercial power conversion. With a collector-emitter voltage rating of 1200 V and a continuous collector current of 200 A, this module delivers consistent, high-power performance in demanding applications.

Built around Trenchstop IGBT4 technology, the FF200R12KT4 combines low switching losses and enhanced conduction characteristics, helping to increase system efficiency and reduce energy waste. Its integrated emitter-controlled fast recovery diode ensures smooth current control during switching, lowering stress on downstream components.

With a typical power dissipation of up to 1.1 kW, the FF200R12KT4 supports robust thermal operation suitable for prolonged usage. Designed for compact system integration, the module uses the proven EconoPACK™ 3 half-bridge packaging, which delivers both space-saving mounting and high mechanical stability.

This module excels in applications such as frequency-controlled motor drives, solar and renewable energy inverters, uninterruptible power supplies (UPS), welding systems, HVAC controls, EV chargers, and railway traction converters. Its efficiency, durability, and thermal robustness make it a reliable solution for power-critical industrial deployments.


Key Specifications

Feature Specification
Collector-Emitter Voltage (V<sub>CEO</sub>) 1200 V
Continuous Collector Current (I<sub>Cnom</sub>) 200 A
Power Dissipation (P<sub>tot</sub>) Up to 1100 W (typical)
Configuration Half-bridge module
Technology Trenchstop IGBT4 with emitter-controlled fast recovery diode
Package Type EconoPACK™ 3 half-bridge
Operating Junction Temperature (T<sub>j</sub>) Up to 150 °C
Typical Dimensions (W × L) 61.4 mm × 106.4 mm
Key Applications Motor drives, inverters, UPS, welding, renewable energy, EV chargers, HVAC

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