Infineon FF200R12KE4 1200V 200A IGBT Module
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Infineon FF200R12KE4 1200V 200A IGBT Module
FF200R12KE4 IGBT Power Module – 1200 V, 200 A
The FF200R12KE4 by Infineon is a high-performance IGBT (Insulated Gate Bipolar Transistor) module engineered for heavy-duty industrial and commercial use. With a collector-emitter voltage of 1200 V and nominal continuous current of 200 A, it reliably supports demanding power conversion tasks.
Built using Trench/Field-Stop IGBT4 technology paired with an integrated emitter-controlled diode, the module delivers low saturation voltage (~1.75 V), minimizing conduction losses.It also features a solid dual (half-bridge) configuration in a compact format.
Its power dissipation rating of up to 1100 W, combined with a wide junction temperature range up to 150 °C, ensures durability under thermal stress.The module benefits from the reliable EconoPACK™ 3 half-bridge package, delivering both mechanical stability and ease of system integration.
Key applications include motor drives, solar and renewable energy inverters, UPS systems, welding equipment, EV chargers, HVAC controls, and railway traction systems. Its balance of efficiency, durability, and compact design makes it ideal for long-term industrial deployments.
Key Specifications
| Feature | Specification |
|---|---|
| Collector–Emitter Voltage (V<sub>CEO</sub>) | 1200 V |
| Continuous Collector Current (I<sub>C</sub> nom) | 200 A (nominal) |
| Collector–Emitter Saturation Voltage (V<sub>CE(sat)</sub>) | ~1.75 V (typical, @ 200 A) |
| Power Dissipation (P<sub>tot</sub>) | Up to 1100 W (typical) |
| Configuration | Dual (Half-bridge) module |
| Technology | Trench/Field-Stop IGBT4 with emitter-diode |
| Package Type | EconoPACK™ 3 |
| Operating Junction Temperature (T<sub>j</sub>) | Up to 150 °C |
| Dimensions (L × W × H) | ~106.4 mm × 61.4 mm × 30 mm |
| Applications | Motor Drives, Inverters, UPS, Welding, Renewables, EV Chargers, HVAC |
