Infineon FF200R12KE3 1200V, 200A IGBT Module
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Infineon FF200R12KE3 1200V, 200A IGBT Module
FF200R12KE3 IGBT Power Module – 1200 V, 200 A
The FF200R12KE3 by Infineon is an industrial-grade IGBT (Insulated Gate Bipolar Transistor) power module designed for reliable and efficient operation in demanding power electronic systems. With a collector-emitter voltage rating of 1200 V and a continuous collector current of 200 A, this module delivers consistent performance in high-power applications such as motor drives, inverters, UPS systems, welding equipment, HVAC systems, and railway traction.
This module achieves high efficiency through a low collector-emitter saturation voltage of approximately 1.7 V, reducing conduction losses and minimizing energy waste. Its robust construction and EconoPACK™ 3 packaging ensure effective heat dissipation, mechanical stability, and easy integration into compact industrial systems. The FF200R12KE3 operates reliably over a wide temperature range from -40°C to +125°C, making it suitable for environments with varying thermal conditions.
Designed with Trenchstop IGBT3 technology, the module supports efficient switching and thermal performance with a typical power dissipation of up to 1050 W. Its compact dimensions of 106.4 mm × 61.4 mm × 30 mm allow it to fit seamlessly into modern power electronic setups while delivering dependable long-term performance.
Key Specifications
| Feature | Specification |
|---|---|
| Collector-Emitter Voltage (V<sub>CE</sub>) | 1200 V |
| Continuous Collector Current (I<sub>C</sub>) | 200 A |
| Collector-Emitter Saturation Voltage (V<sub>CE(sat)</sub>) | ~1.7 V (typical) |
| Power Dissipation (P<sub>tot</sub>) | Up to 1050 W (typical) |
| Package Type | EconoPACKâ„¢ 3 |
| Technology | Trenchstop IGBT3 |
| Operating Temperature Range | -40°C to +125°C |
| Dimensions (L × W × H) | 106.4 mm × 61.4 mm × 30 mm |
