Infineon FF200R12KE3 1200V, 200A IGBT Module
Regular price
Rs.13,200.00
Sale price
Rs.14,500.00
FF200R12KE3 — Infineon IGBT Power Module (1200 V, 200 A)
The Infineon FF200R12KE3 is a high-performance IGBT power module built for heavy-duty industrial and commercial power electronics. With a 1200 V collector-emitter rating and a 200 A continuous collector current, this dual IGBT module delivers stable, high-power switching suitable for motor drives, three-phase inverters, UPS systems, welding equipment, HVAC drives, and traction applications. The module uses Trenchstop IGBT3 technology and is presented in Infineon’s EconoPACK™ 3 housing for compact integration without sacrificing thermal performance.
Engineered for efficiency and long-term reliability, the FF200R12KE3 features a low typical collector-emitter saturation voltage (~1.7 V) and anti-parallel diode characteristics that reduce conduction losses and switching dissipation. Typical total power dissipation ratings and the EconoPACK™ 3 mechanical design combine to provide effective heat dissipation and mechanical robustness in industrial environments. The device is specified to operate across a wide junction temperature range (–40 °C to +125 °C) and supports high switching performance with Trenchstop IGBT3 cells—helping designers reach high system efficiency and lower cooling requirements.
Compact and easy to integrate, the FF200R12KE3’s footprint (106.4 mm × 61.4 mm × 30 mm) and standardized 62 mm half-bridge layout permit straightforward mounting into modern power modules and converters. Its industrial qualification and robust package make it suitable for long service life in harsh conditions while simplifying replacement and footprint standardization across product lines. For complete electrical characteristics, pin-out drawings, thermal data, recommended soldering/torque values and application notes, please refer to the official Infineon datasheet.
Key Specifications
| Feature | Specification |
|---|---|
| Manufacturer / Part | Infineon — FF200R12KE3 |
| Voltage class (V<sub>CE</sub>) | 1200 V. |
| Continuous collector current (I<sub>C</sub>) | 200 A (nominal). |
| Collector-Emitter saturation voltage (V<sub>CE(sat)</sub>) | ~1.7 V (typical @ Tvj = 25 °C). |
| Power dissipation (P<sub>tot</sub>) | Up to ~1050 W (typical rating shown in datasheet). |
| Package | EconoPACK™ 3 (62 mm half-bridge). |
| Technology | Trenchstop IGBT3. |
| Anti-parallel diode forward voltage (V<sub>F</sub>) | ~1.65 V (typical). |
| Operating junction temperature (T<sub>j</sub>) | –40 °C … +125 °C. |
| Dimensions (L × W × H) | 106.4 mm × 61.4 mm × 30 mm. |
| Typical switching characteristics | Rise/fall and Eon/Eoff graphs and values available in datasheet. |
| Recommended gate drive / V<sub>GE</sub> | See datasheet for gate drive recommendations and RG values. |
| Mounting / mechanical details | Screw torque, isolation, and mounting drawings in datasheet. |
For more detailed electrical characteristics, thermal curves, pin-out diagrams and handling instructions, please refer to the official Infineon datasheet: Infineon FF200R12KE3 Datasheet (PDF).
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