Infineon BSM75GD120DN2 1200V 75A IGBT Module

BSM75GD120DN2 IGBT Module – 1200V 75A Full Bridge EconoPACK 3A by Infineon

BSM75GD120DN2 is a high-efficiency 1200V IGBT module from Infineon Technologies, designed for full-bridge 3-phase inverter applications in industrial motor drives, UPS systems, and power conversion equipment. With a continuous collector current of 103A and full-bridge configuration, this module supports high-load, high-frequency switching in demanding power electronics environments.

Engineered with Infineon’s advanced silicon IGBT technology, the BSM75GD120DN2 offers stable performance with a low collector-emitter saturation voltage of 2.5V and gate-emitter leakage current of just 320nA. It supports a power dissipation capacity of 520W, ensuring high thermal efficiency and long-term reliability under continuous operation. The module also operates across a wide temperature range from -40°C to +150°C, making it suitable for harsh industrial conditions.

Housed in a robust EconoPACK 3A package with screw-mounting, the BSM75GD120DN2 ensures secure and simple installation. Measuring 122mm x 62mm x 17mm, it is ideal for applications where compact design, high power density, and reliability are essential — such as VFDs, energy converters, and high-voltage switching systems.

Key Specs
Voltage Rating: 1200V
Current Rating: 103A Continuous
Saturation Voltage: 2.5V
Power Dissipation: 520W
Gate Leakage Current: 320nA
Max Gate-Emitter Voltage: ±20V
Configuration: Full Bridge
Package: EconoPACK 3A
Mounting Style: Screw Mount
Technology: Silicon IGBT
Dimensions: 122mm x 62mm x 17mm
Operating Temp: -40°C to +150°C
Brand: Infineon Technologies