Infineon BSM35GD120DN2E3224 1200V 50A IGBT Module

BSM35GD120DN2E3224 IGBT Module – 1200V 50A EconoPACK2 by Infineon

The BSM35GD120DN2E3224 is a high-performance 1200V IGBT module developed by Infineon Technologies for use in compact 3-phase inverter systems, motor drives, and power control applications. With a robust N-channel hex configuration, this module delivers a continuous collector current of 50A and supports high-speed switching in demanding industrial environments.

Built on Infineon’s proven silicon IGBT technology, the BSM35GD120DN2E3224 ensures efficient energy handling with a collector-emitter saturation voltage of just 2.7V and low gate-emitter leakage current of 150nA. It supports a maximum gate-emitter voltage of 20V and a total power dissipation of 280W, making it suitable for high-reliability and thermally intensive power systems.

Encased in the compact EconoPACK 2 housing with screw-mount capability, the module is optimized for easy integration and long-term stability. It operates in a wide temperature range from -40°C to +150°C and is ideal for industrial applications such as variable frequency drives (VFDs), UPS systems, renewable energy converters, and switching power supplies.

Key Specs
Voltage Rating: 1200V
Current Rating: 50A Continuous (at 25°C)
Saturation Voltage (V_CE(sat)): 2.7V
Power Dissipation: 280W
Gate Leakage Current: 150nA
Gate-Emitter Voltage Max: ±20V
Package: EconoPACK 2
Configuration: Hex
Technology: Silicon IGBT
Mounting: Screw Mount
Dimensions: 107.5mm x 45mm x 17mm
Operating Temp: -40°C to +150°C
Brand: Infineon Technologies