Infineon BSM35GD120DN2 1200V 35A IGBT Module

BSM35GD120DN2 IGBT Module – 1200V 35A EconoPACK2 by Infineon

BSM35GD120DN2 is a high-efficiency 1200V IGBT module from Infineon Technologies, designed for compact 3-phase inverter applications in industrial drives, UPS systems, and motor control circuits. Featuring a hex configuration, this module supports a continuous collector current of 50A and ensures robust switching performance even in demanding environments.

With a collector-emitter voltage rating of 1.2kV and a low gate-emitter leakage current of just 150nA, the BSM35GD120DN2 delivers efficient and controlled power conversion. It has a collector-emitter saturation voltage of 2.7V and a total power dissipation of 280W, making it suitable for thermal-critical and space-constrained applications. Built on Infineon’s advanced silicon IGBT technology, it ensures long-term durability and reliability across a wide temperature range from -40°C to +150°C.

This module comes in a compact EconoPACK 2 package with screw-mount capability for secure installation. Measuring 107.5mm x 45.5mm x 17mm, the BSM35GD120DN2 is ideal for use in high-frequency switching systems, renewable energy solutions, and power conversion systems where space, efficiency, and performance matter.

Key Specs
Voltage: 1200V
Current: 35A (nominal), 50A continuous at 25°C
Power Dissipation: 280W
Saturation Voltage (V_CE(sat)): 2.7V
Technology: Silicon IGBT
Gate Leakage Current: 150nA
Package: EconoPACK 2
Mounting: Screw Mount
Temperature Range: -40°C to +150°C
Dimensions: 107.5mm x 45.5mm x 17mm