HY1920W 200V 90A N-channel MOSFET TO-247
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HY1920W 200V 90A N-channel MOSFET TO-247
HY1920W is a high-performance N-channel MOSFET engineered for demanding applications in the power electronics industry. Designed to handle a maximum drain-source voltage of 200V and a continuous drain current of 90A, this MOSFET excels in high-current switching tasks. Its low on-resistance (RDS(on)) of 23mΩ (typical) at VGS=10V and ID=45A ensures exceptional efficiency, minimizing power losses and heat generation, making it a top choice for power supplies, motor drives, and renewable energy systems.
Encased in a robust TO-247A-3L package, the HUAYI HY1920W offers superior thermal performance and mechanical strength, ensuring reliability even in harsh environments. The device supports a wide operating temperature range from -55°C to 175°C, allowing it to perform consistently across diverse conditions. This makes it ideal for applications such as DC-DC converters, welding equipment, and uninterruptible power supplies (UPS), where durability and efficiency are paramount.
Engineers and designers in the power electronics sector will find the HUAYI HY1920W MOSFET a cost-effective and reliable solution for their projects. Its ability to handle high currents and maintain low on-resistance supports optimized circuit designs, while the TO-247A-3L package enhances thermal management. Whether for industrial, automotive, or renewable energy applications, this MOSFET delivers the performance needed to meet modern power electronics demands.