2SA1020 PNP Power Transistor
The 2SA1020, a one-watt high-current PNP transistor from ON Semiconductor, delivers impressive performance, reliability, and versatility for demanding power-electronics applications. With a collector-emitter voltage rating of up to 50 V and the capability to handle continuous collector currents of 2 A, this component excels in power switching and amplifier designs. Packaged in a compact TO‑92 (TO‑226) form, the 2SA1020 offers a strong balance of current capacity and thermal performance, making it a go-to choice for both industrial and commercial power circuits.
Built for durability and efficiency, the 2SA1020 maintains a low saturation voltage, typically around ‑0.5 V at 1 A, which helps minimize power loss during conduction. Its high-speed switching capability (typical storage time ~1 µs) and transition frequency of around 100 MHz ensure it remains responsive in fast-switching applications. The device is also specified for a wide operating junction temperature range from –55 °C to +150 °C, meaning it can stand up to harsh thermal environments without performance degradation. These attributes make it well-suited for scenarios such as power‑supply regulators, industrial motor drives, voltage amplifiers, and commercial control systems.
Beyond raw performance, the 2SA1020’s design prioritizes reliability and long-term operation. Its power dissipation rating allows for 900 mW at ambient temperature (derating above 25 °C), while at case temperature it can sustain up to 1.5 W – giving designers sufficient thermal headroom in real-world systems. Furthermore, the device is available in a lead‑free package, aligning with RoHS-compliant manufacturing practices. Whether deployed in commercial power amplifiers, automation equipment, or industrial control boards, the 2SA1020 offers consistent, energy-efficient, and dependable operation over extended lifetimes.
Key Specifications
| Parameter |
Value |
Unit |
| Device Type |
PNP Bipolar Junction Transistor |
|
| Collector–Emitter Voltage (V<sub>CE</sub>) |
50 |
V dc
|
| Collector–Base Voltage (V<sub>CB</sub>) |
50 |
V dc
|
| Emitter–Base Voltage (V<sub>EB</sub>) |
5.0 |
V dc
|
| Collector Current (I<sub>C</sub>, continuous) |
2.0 |
A dc
|
| Power Dissipation (P<sub>D</sub>) @ T<sub>A</sub>=25 °C |
900 |
mW
|
| Power Dissipation @ T<sub>C</sub>=25 °C |
1.5 |
W
|
| Thermal Resistance (R<sub>θJA</sub>) |
125 |
°C/W
|
| Thermal Resistance (R<sub>θJC</sub>) |
83.3 |
°C/W
|
| Operating & Storage Junction Temperature |
–55 to +150 |
°C
|
| Transition Frequency (f<sub>T</sub>) |
≈ 100 |
MHz |
| Saturation Voltage (V<sub>CE(sat)</sub>) |
–0.5 |
V (IC = –1 A) |