CSD19505KCS — 80 V N-Channel NexFET™ Power MOSFET
The CSD19505KCS MOSFET from Texas Instruments is an 80 V N-Channel NexFET™ power MOSFET designed for high-efficiency, high-current switching applications. Featuring a TO-220 plastic package, it provides excellent thermal performance and low conduction losses, making it suitable for DC/DC converters, synchronous rectifiers, motor drives, and industrial power systems. With a drain-to-source voltage of 80 V and gate-to-source voltage of ±20 V, the device operates reliably in a wide temperature range of −55 °C to 175 °C.
This MOSFET achieves a typical RDS(on) of 2.6 mΩ at VGS = 10 V and a total gate charge (Qg) of 76 nC, reducing switching and conduction losses in demanding circuits. The continuous drain current reaches 208 A (TC = 25 °C), while pulsed currents can surge up to 400 A, supporting high-power density designs. Its avalanche energy rating of 510 mJ and junction-to-case thermal resistance of 0.5 °C/W ensure stable operation under peak load conditions.
The CSD19505KCS power MOSFET is optimized for industrial and commercial applications requiring efficiency, durability, and thermal reliability. RoHS compliant and Pb-free, it supports environmentally responsible designs while delivering consistent electrical performance. Its low reverse-recovery charge and controlled diode characteristics make it a practical solution for high-efficiency switching and motor control applications. For more technical details, refer to the TI CSD19505KCS datasheet.
Key Specifications
| Parameter | Value |
|---|---|
| Manufacturer / Part | Texas Instruments — CSD19505KCS |
| Device Type | 80 V N-Channel NexFET™ MOSFET (TO-220) |
| Drain-to-Source Voltage (BVDSS) | 80 V |
| Gate-to-Source Voltage (VGS) | ±20 V |
| RDS(on) (typ / max @ 10 V) | 2.6 mΩ / 3.1 mΩ |
| RDS(on) @ 6 V | 2.9 mΩ typ / 3.8 mΩ max |
| Continuous Drain Current | 208 A silicon-limited; 150 A package-limited |
| Pulsed Drain Current | 400 A |
| Power Dissipation | 300 W |
| Total Gate Charge (Qg) | 76 nC |
| Gate-to-Drain Charge (Qgd) | 11 nC |
| Input / Output Capacitance | Ciss 6090–7820 pF; Coss 1600–2080 pF |
| Avalanche Energy (EAS) | 510 mJ |
| Thermal Resistance (RθJC / RθJA) | 0.5 °C/W / 62 °C/W |
| Diode Forward Voltage (VSD) | 0.9–1.1 V |
| Operating Temperature Range | −55 °C to 175 °C |
| Compliance | RoHS, Pb-free terminals |
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