FGL40N120AND 1200V 40A IGBT
Regular price
Rs.500.00
FGL40N120AND
The FGL40N120AND is a high-performance 1200 V, 40 A Insulated-Gate Bipolar Transistor (IGBT) from ON Semiconductor designed for industrial and energy-efficient power switching applications. It supports fast switching with low conduction losses, making it suitable for motor drives, solar inverters, UPS systems, and other high-power electronics.
Packaged in a TO‑264‑3 (TO‑247-style) case, the FGL40N120AND offers strong thermal performance and stability under demanding conditions. Its low V<sub>CE(sat)</sub> and NPT technology minimize switching and conduction losses, allowing for efficient operation in high-frequency applications such as industrial automation, welding machines, and power control systems.
This IGBT provides consistent, reliable performance in commercial and industrial power electronics. It features fast switching, low input capacitance, and a short reverse-recovery time for the anti-parallel diode. Its operating range from –55 °C to +150 °C ensures durability and long-term stability for demanding applications.
Applications and Features
The FGL40N120AND is commonly used in motor drives, inverters, UPS systems, and renewable energy systems. Its low conduction voltage drop improves overall system efficiency, while fast switching reduces energy losses. The device is engineered to maintain stable operation under thermal and electrical stress, making it a reliable component in high-power circuits.
The TO‑264 package provides mechanical robustness and excellent heat dissipation. The IGBT also has a short-circuit withstand capability and supports high-frequency operation, meeting the requirements of industrial and commercial power electronics.
Key Specifications
| Specification | Value |
|---|---|
| Device Type | IGBT (Insulated-Gate Bipolar Transistor) |
| Voltage Rating (V<sub>CES</sub>) | 1200 V |
| Continuous Collector Current | 40 A |
| Pulse Collector Current | 160 A |
| Saturation Voltage, V<sub>CE(sat)</sub> | ~2.6 V @ IC = 40 A, V<sub>GE</sub>=15 V |
| Gate‑Emitter Voltage (V<sub>GE</sub>) | ±25 V |
| Short-Circuit Withstand Time | 10 µs @ V<sub>CE</sub> = 600 V, V<sub>GE</sub> = 15 V |
| Operating Junction Temperature | –55 °C to +150 °C |
| Storage Temperature Range | –55 °C to +150 °C |
| Thermal Resistance, Junction-to-Case | 0.25 °C/W |
| Reverse-Recovery Time (FRD trr) | ~75 ns (typical) |
| Package | TO‑264‑3 (through-hole) |
For more detailed information, please refer to the ON Semiconductor FGL40N120AND datasheet.
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