75N15
The 75N15 is an N‑channel power MOSFET from IXYS / Littelfuse (part number IXTH75N15) with a 150 V drain‑to‑source voltage rating and continuous current up to 75 A (T<sub>C</sub> = 25 °C). Its low on‑resistance of 23 mΩ (at V<sub>GS</sub> = 10 V) reduces conduction losses and operating temperature. The TO‑247 package supports efficient thermal dissipation for stable operation under high current conditions.
The MOSFET supports unclamped inductive switching (UIS) and high avalanche energy, making it suitable for circuits with inductive loads. Its gate structure and durable cell design maintain consistent performance across a junction temperature range of –55 °C to +150 °C.
The 75N15 is suitable for use in inverters, motor drives, UPS, telecom power supplies, LED drivers, and battery management systems. Its combination of low conduction loss, fast switching, and thermal stability supports reliable operation in demanding industrial and commercial environments.
Key Specifications
| Parameter | Specification |
|---|---|
| Part Number | IXTH75N15 (75N15) |
| Type | N‑Channel Power MOSFET |
| Drain‑Source Voltage (V<sub>DSS</sub>) | 150 V |
| Continuous Drain Current (I<sub>D</sub>) | 75 A (T<sub>C</sub> = 25 °C) |
| On‑Resistance (R<sub>DS(on)</sub>) | 23 mΩ @ V<sub>GS</sub> = 10 V |
| Package | TO‑247 |
| Input Capacitance (C<sub>iss</sub>) | 5,400 pF (typical) |
| Total Gate Charge (Q<sub>g</sub>) | 210 nC @ V<sub>GS</sub> = 10 V |
| Operating Temperature Range (T<sub>J</sub>) | –55 °C to +150 °C |
| Power Dissipation (P<sub>D</sub>) | 330 W (T<sub>C</sub> = 25 °C) |
| Gate‑Source Voltage (V<sub>GS</sub>) | ±20 V continuous, ±30 V transient |
| Avalanche / UIS Rating | Supports unclamped inductive switching |
| Threshold Voltage (V<sub>GS(th)</sub>) | 2.0 V min – 4.0 V max @ I<sub>D</sub> = 250 µA |
