MMGU75S120B6C
The MMGU75S120B6C is a high-efficiency 1200V, 75A IGBT (Insulated Gate Bipolar Transistor) module designed for demanding industrial and commercial power electronics applications. Engineered with advanced trench FS-technology, it provides reliable performance under harsh operating conditions. This module is ideal for AC motor drives, motion control systems, inverters, and power supplies, ensuring smooth and efficient energy management in industrial environments.
With a maximum junction temperature of 150°C and low switching losses, the MMGU75S120B6C offers exceptional efficiency and durability. Its fast switching characteristics and short tail current enhance system responsiveness, reducing energy waste and improving overall operational efficiency. These features make it a dependable choice for applications requiring high performance and consistent reliability over long-term use.
The module’s versatility allows it to meet various industrial needs, making it suitable for both commercial and industrial applications. Its key specifications include a collector-emitter voltage of 1200V, DC collector current of 75A, and power dissipation capability of 410W per IGBT.
Key Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 1200V |
| Gate-Emitter Voltage (VGES) | ±20V |
| DC Collector Current (IC) | 75A @ 80°C |
| Repetitive Peak Collector Current (ICM) | 150A (tp = 1ms) |
| Power Dissipation per IGBT (Ptot) | 410W |
| Average Forward Current (IF(AV)) | 35A |
| Repetitive Peak Forward Current (IFRM) | 70A (tp = 1ms) |
| Maximum Junction Temperature (TJ) | 150°C |
| Rise Time (tr) | 55ns |
| Package Type | Module |
We deliver all across Pakistan through trusted courier partners, including TCS and Leopards. Our nationwide shipping ensures that your order reaches you within 2 to 3 working days. Delivery charges are calculated based on the total parcel weight — for example, 1kg, 2kg, or 3kg packages may vary in cost accordingly.