FS6R06VE3_B2
The FS6R06VE3_B2 is a 600 V IGBT module from Infineon Technologies, designed for use in industrial and commercial power electronics. It is widely applied in three-phase inverters, motor drives, UPS systems, and power conversion equipment. With its 600 V collector-emitter voltage and continuous current capability, the module provides stable switching performance with low conduction and switching losses.
The device is specified with a typical collector-emitter saturation voltage of 1.55 V at 6 A and a total power dissipation of 40.5 W at TC = 25 °C. Its switching times, diode recovery behavior, and thermal resistance values are well documented, enabling reliable thermal management and accurate system design. The FS6R06VE3_B2 also offers low gate leakage and low gate charge, reducing drive circuit complexity.
These characteristics make the FS6R06VE3_B2 suitable for industrial drives, UPS systems, renewable energy inverters, and other applications that require efficient and predictable performance in mid-voltage power stages.
Key Specs
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Collector–Emitter Voltage (VCES) | 600 V |
| Continuous Collector Current (IC) | 6 A (nominal) / 11 A (TC = 25 °C) |
| Repetitive Peak Collector Current (ICRM) | 12 A (tP = 1 ms) |
| Collector–Emitter Saturation Voltage (VCE(sat), IC=6 A) | typ. 1.55 V (25 °C) |
| Total Power Dissipation (Ptot) | 40.5 W (TC = 25 °C) |
| Gate–Emitter Leakage (IGES) | 400 nA |
| Gate Charge (QG) | 0.06 µC (VGE = -15…+15 V) |
| Turn-on / Turn-off Times | td(on) ≈ 0.012 µs, td(off) ≈ 0.10 µs |
| Thermal Resistance (Rth j-c) | IGBT: 3.30–3.70 K/W; Diode: 4.50–5.00 K/W |
| Diode Continuous Forward Current (IF) | 6 A |
| Datasheet Revision | Rev. 2.0, March 2013 |
For more detailed information, please refer to the Infineon datasheet FS6R06VE3_B2 Datasheet (PDF).
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