Infineon FF200R12KE3 1200V, 200A IGBT Module

FF200R12KE3 IGBT Power Module – 1200 V, 200 A

The FF200R12KE3 by Infineon is an industrial-grade IGBT (Insulated Gate Bipolar Transistor) power module designed for reliable and efficient operation in demanding power electronic systems. With a collector-emitter voltage rating of 1200 V and a continuous collector current of 200 A, this module delivers consistent performance in high-power applications such as motor drives, inverters, UPS systems, welding equipment, HVAC systems, and railway traction.

This module achieves high efficiency through a low collector-emitter saturation voltage of approximately 1.7 V, reducing conduction losses and minimizing energy waste. Its robust construction and EconoPACK™ 3 packaging ensure effective heat dissipation, mechanical stability, and easy integration into compact industrial systems. The FF200R12KE3 operates reliably over a wide temperature range from -40°C to +125°C, making it suitable for environments with varying thermal conditions.

Designed with Trenchstop IGBT3 technology, the module supports efficient switching and thermal performance with a typical power dissipation of up to 1050 W. Its compact dimensions of 106.4 mm × 61.4 mm × 30 mm allow it to fit seamlessly into modern power electronic setups while delivering dependable long-term performance.

Key Specifications