FF1000R17IE4 IGBT Module
The FF1000R17IE4 from Infineon Technologies is a robust and efficient IGBT (Insulated Gate Bipolar Transistor) module designed for high-power industrial applications. With a collector-emitter voltage rating of 1700V and a continuous collector current of 1000A, this module ensures reliable performance in demanding environments. Its advanced Trenchstop™ IGBT4 technology and Emitter Controlled Diode (EC4) provide low conduction and switching losses, enhancing overall system efficiency.
This module is housed in the PrimePACK™ 3 package, offering a compact and thermally optimized solution for power electronics. It is ideal for applications such as industrial motor drives, uninterruptible power supplies (UPS), and renewable energy systems. The FF1000R17IE4's design prioritizes durability and reliability, making it suitable for both commercial and industrial use.
Key Specifications
| Specification | Value |
|---|---|
| Collector-Emitter Voltage (Vce) | 1700V |
| Continuous Collector Current (Ic) | 1000A |
| Saturation Voltage (Vce(sat)) | 2.45V |
| Operating Junction Temperature | -40°C to +150°C |
| Package Type | PrimePACK™ 3 |
| Dimensions (L×W×H) | 250mm × 89mm × 36.5mm |
| Weight | 1200g |
| Gate-Emitter Voltage (Vge) | ±20V |
| Power Dissipation (Pd) | 6.25kW |
| Thermal Resistance (junction to case) | 48K/W |
For more detailed information, please refer to the Infineon FF1000R17IE4 datasheet.
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