FS75R12KE3-B3 IGBT Power Module
The FS75R12KE3-B3 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module from Infineon Technologies, designed for demanding industrial and commercial applications. With a collector-emitter voltage rating of 1200V and a continuous collector current of 100A, it ensures reliable operation in high-power switching systems. Its robust design supports applications such as motor drives, uninterruptible power supplies (UPS), and industrial machinery.
This IGBT module offers low conduction and switching losses, which reduce thermal stress and optimize energy efficiency. It operates reliably across a wide temperature range from -40°C to +150°C, ensuring stable performance in demanding industrial conditions.
The FS75R12KE3-B3 features a compact EconoPACK™ 2 package with a screw-mount design, allowing easy integration into industrial setups. Its high current handling capabilities and thermal performance make it suitable for maintaining operational efficiency and minimizing downtime in critical applications.
Key Specifications:
| Specification | Value |
|---|---|
| Collector-Emitter Voltage (VCE) | 1200 V |
| Continuous Collector Current (IC) | 100 A |
| Pulsed Collector Current (ICp) | 200 A |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.15 V (at 75A) |
| Gate Threshold Voltage (VGE(th)) | 6.5 V |
| Power Dissipation (Ptot) | 355 W |
| Operating Temperature (Tj) | -40°C to +150°C |
| Thermal Resistance (RthJC) | Not specified |
| Package Type | EconoPACK™ 2 |
| Mounting Style | Screw Mount |
For more detailed information, please refer to the Infineon FS75R12KE3-B3 datasheet.
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