BSM25GD120DN2 1200V 25A IGBT Full Bridge Module – Infineon
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BSM25GD120DN2 — 1200 V IGBT Full-Bridge Module
The BSM25GD120DN2 is a full-bridge IGBT module developed for use in industrial and commercial power electronics. Built in an EconoPACK™2 insulated-base package, it combines low conduction losses with fast switching characteristics and integrated free-wheel diodes. Typical applications include three-phase inverters, motor drives, UPS systems, and power supplies.
This module is designed with stable thermal performance and consistent operating behaviour. It features low chip-to-case thermal resistance, rated power dissipation up to 200 W per IGBT, and reinforced isolation with a 2500 VAC test voltage. Gate threshold and switching data are specified to support correct gate-driver design and reliable operation under various load conditions.
The BSM25GD120DN2 is suitable for medium-power three-phase systems requiring 1200 V blocking capability. It can be used in equipment such as industrial motor controllers, UPS modules, and solar inverters. For complete electrical ratings, mechanical details, and design guidance, always refer to the official datasheet.
Key Specs
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Part number | BSM25GD120DN2 |
| Module type | 3-phase full-bridge IGBT with free-wheel diodes |
| Collector-Emitter Voltage (VCE) | 1200 V |
| DC Collector Current (IC) | 25 A (TC = 25 °C); 35 A (TC = 80 °C) |
| Pulsed Collector Current (ICpuls, 1 ms) | 50 A (TC = 25 °C); 70 A (TC = 80 °C) |
| Collector-Emitter Saturation Voltage | Typ. 2.5 V at IC = 25 A, VGE = 15 V, Tj = 25 °C |
| Power Dissipation per IGBT | 200 W (TC = 25 °C) |
| Gate Threshold Voltage | 4.5 – 6.5 V |
| Thermal Resistance (RthJC) | IGBT ≤ 0.6 K/W; diode ≤ 1 K/W |
| Operating / Storage Temperature | −55 … +150 °C |
| Package | EconoPACK™2, insulated base |
| Isolation Test Voltage | 2500 VAC, 1 min |
For more detailed information, please refer to the Infineon datasheet (PDF).
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