BSM200GB170DLC IGBT Power Module – 200A, 1700V Dual Configuration
The BSM200GB170DLC is an IGBT (Insulated Gate Bipolar Transistor) module designed for use in industrial and commercial power electronics. It supports a collector-emitter voltage of 1700V and a continuous collector current of 200A, making it suitable for high-power switching applications.
This module has a dual IGBT configuration, allowing efficient handling of high voltage and current. It supports repetitive peak forward currents up to 400A and offers a total power dissipation of 1660W at 25°C. With a gate-emitter voltage tolerance of ±20V, the BSM200GB170DLC provides stable and reliable switching performance.
Typical applications include motor drives, inverters, uninterruptible power supplies (UPS), and renewable energy systems. Its electrical and thermal characteristics make it suitable for demanding environments where consistent power handling is required.
Key Specifications
Collector-Emitter Voltage (Vces): 1700V
Continuous Collector Current (Ic) @ 25°C: 200A
Repetitive Peak Forward Current (Ifrm): 400A (1ms, Tc = 80°C)
Total Power Dissipation (Ptot): 1660W @ 25°C
Gate-Emitter Voltage (Vges): ±20V
Module Configuration: Dual IGBT
Switching Type: High-power switching / fast response
Applications: Motor drives, inverters, UPS, renewable energy systems
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