K3878 900V 9A Silicon N-Channel MOSFET

K3878 MOSFET 900V 9A – High Voltage N-Channel Transistor for Power Electronics

The K3878 MOSFET 900V 9A is a silicon-based N-channel power transistor developed by Toshiba for high-voltage and high-current switching applications. With a drain-source voltage of 900V and a continuous drain current of 9A, this component supports efficient operation in power supplies, converters, and industrial control systems.

Engineered for performance, the K3878 features a low on-resistance of 1.0Ω (typ.) and a high forward transfer admittance of 7.0 S (typ.), enabling minimal conduction losses and smooth current flow. Its low gate charge (60nC typ.) and fast switching response make it suitable for high-frequency designs where space, speed, and thermal efficiency matter.

The TO-3P package offers excellent thermal conductivity and mechanical stability. With a maximum operating temperature of 150°C and a robust silicon dioxide gate oxide structure, this MOSFET ensures long-term durability in harsh industrial conditions. It supports dv/dt resilience and low leakage current, enhancing system reliability against voltage transients.

Key Specs Type: N-Channel MOSFET Drain-Source Voltage: 900V Continuous Drain Current: 9A Gate Charge: 60nC (typical) On-Resistance: 1.0Ω (typical) Package: TO-3P Max Operating Temp: 150°C Applications: SMPS, Converters, Motor Control, UPS, Telecom Systems