STGW40H120DF2 IGBT Power Semiconductor is a high-performance device designed for applications requiring efficient switching and reduced power loss. With a collector-emitter voltage (VCE) of 1200V and a collector current (IC) of 40A, this IGBT offers reliable performance in demanding conditions. Its trench gate field-stop structure ensures a balance between conduction and switching losses, making it ideal for high-frequency converters, photovoltaic inverters, uninterruptible power supplies, welding machines, and power factor correction circuits.
Featuring minimized tail current, fast recovery antiparallel diode, and a high-speed switching series, this IGBT delivers outstanding efficiency and thermal stability with a maximum junction temperature of 175Β°C. Its low thermal resistance and safe paralleling capability enhance reliability in power systems.
Available across Pakistan, including Karachi, Lahore, Islamabad, Faisalabad, Peshawar, and Multan. Datasheet attached for detailed specifications. For bulk orders,
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