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ST P9NB50FP 500V 8.6A N Channel MOSFET

Regular price Rs.150.00
Sale price Rs.170.00
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ST P9NB50FP 500V 8.6A N Channel MOSFET
ST P9NB50FP 500V 8.6A N Channel MOSFET
Regular price Rs.150.00
Sale price Rs.170.00

STMicroelectronics P9NB50FP MOSFET

The P9NB50FP is a high-voltage N‑channel PowerMESH™ MOSFET from STMicroelectronics, expertly engineered using the advanced PowerMESH™ overlay process. Designed for demanding power-electronics applications, this device delivers exceptional performance with its robust 500 V drain-to-source rating and continuous current capability. The PowerMESH™ technology enables very low on-resistance and gate charge, while also providing superior avalanche ruggedness and dv/dt tolerance — making the P9NB50FP a powerful, reliable solution for high-frequency, high-stress switching environments.

In industrial and commercial power systems, the P9NB50FP excels in applications such as SMPS (switch-mode power supplies), solar inverters, motor drives, uninterruptible power supplies (UPS), and welding converters. Its fully insulated TO‑220 or TO‑220FP package ensures excellent thermal management and electrical isolation, simplifying design integration in compact and safety-critical systems. Whether you're building a high-voltage converter or a robust control circuit, this MOSFET provides the efficiency and strength to handle real-world industrial workloads.

Beyond raw power, the P9NB50FP offers long-term reliability. With a typical on-resistance of just ~0.75 Ω (R_DSon), it minimizes conduction losses, and its minimal intrinsic capacitances combined with optimized gate charge support fast switching transitions. STMicroelectronics rigorously tests each device through 100 % avalanche testing to guarantee ruggedness under surge and transient conditions, giving engineers confidence when designing for harsh environments.


Key Specifications

Parameter Value
Device Type N‑Channel PowerMESH™ MOSFET
Drain‑Source Voltage (V<sub>DSS</sub>) 500 V 
Continuous Drain Current (I<sub>D</sub>) 8.6 A at T<sub>C</sub>= 25 °C
On‑Resistance (R<sub>DS(on)</sub>, typical) 0.75 Ω
Gate‑Source Voltage (V<sub>GS</sub>) ± 30 V
Total Power Dissipation (P<sub>tot</sub>) 125 W at T<sub>C</sub>= 25 °C
Package Options TO‑220 / Fully‑insulated TO‑220FP
dv/dt Capability Very high, optimized via PowerMESH™ structure
Reliability 100% avalanche tested
Applications SMPS, motor drives, DC–AC converters, welding inverters, UPS systems 
Operating Temperature Range –65 °C to +150 °C (storage), per datasheet

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