IRG4BC30UD
The IRG4BC30UD is an N‑channel insulated gate bipolar transistor (IGBT) from International Rectifier, designed for reliable high-speed switching in industrial power systems. It features a collector-emitter voltage of 600 V and a continuous current rating of 12 A, making it suitable for motor drives, UPS systems, and solar inverters. The device integrates an ultrafast recovery diode, reducing conduction losses and switching noise, while the TO‑220AB package supports efficient thermal management and straightforward PCB integration.
This IGBT operates efficiently at high switching frequencies up to 20 kHz, providing precision in power conversion circuits. Its low saturation voltage (~1.95 V) minimizes energy loss during conduction, while the built-in ultrafast diode helps manage switching stress and electromagnetic interference (EMI). These characteristics make the IRG4BC30UD appropriate for industrial automation, renewable energy systems, and other commercial power applications.
The IRG4BC30UD is built for stable performance in demanding environments. Its TO‑220AB package allows effective heat dissipation, and its design supports reliable operation over a wide temperature range. The device offers consistent electrical parameters and reduces the need for additional circuit protection, making it suitable for long-term use in high-voltage applications.
Key Specs
| Parameter | Specification |
|---|---|
| Collector‑Emitter Voltage (V<sub>CES</sub>) | 600 V |
| Continuous Collector Current (I<sub>C</sub>) | 12 A |
| Pulsed Collector Current (I<sub>CM</sub>) | 92 A |
| V<sub>CE(on)</sub> (typical) | ~1.95 V @ V<sub>GE</sub> = 15 V, I<sub>C</sub> = 12 A |
| Switching Frequency | Up to 20 kHz |
| Package | TO‑220AB |
| Thermal Resistance (Junction-to-Case) | IGBT: 1.2 °C/W; Diode: 2.5 °C/W |
| Operating Junction Temperature | –55 °C to +150 °C |
| Gate‑Emitter Voltage (V<sub>GE</sub>) | ±20 V (maximum) |
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