Renesas RN75H65 650V 75A IGBT TO-247A

RN75H65 650V 75A IGBT Power Switching Device – TO-247A Package by Renesas

The RN75H65 is a robust Insulated Gate Bipolar Transistor (IGBT) rated at 650V and 75A, designed for high-efficiency power switching applications. Utilizing advanced trench gate and thin wafer technology (G8H series), this IGBT features a built-in fast recovery diode and a low collector-emitter saturation voltage of 1.5V, reducing conduction losses and improving overall system efficiency.

Housed in a TO-247A package, the RN75H65 supports reliable operation with a maximum junction temperature of 175°C, making it suitable for demanding environments such as UPS systems, welding equipment, photovoltaic inverters, and power converters. Its high-speed switching capabilities and durable design make it an excellent choice for industrial power electronics and energy systems.

This IGBT is engineered to deliver strong thermal performance and withstand peak currents up to 300A in short pulses. With its standard quality grade and optimized switching energy losses, the RN75H65 ensures dependable performance in high-power switching scenarios.

Key Specs

Voltage Rating: 650V Current Rating: 75A Continuous (100°C) Technology: Trench Gate IGBT with Built-in Fast Recovery Diode Package: TO-247A Collector-Emitter Saturation Voltage (VCE(sat)): 1.5V Typical Switching Speed: High-Speed, Low Switching Loss Max Junction Temperature: 175°C Applications: UPS, Welding Machines, Photovoltaic Inverters, Power Converter Systems Brand: Renesas Semiconductor